SPN8668 mosfet equivalent, n-channel mosfet.
* 60V/80A,RDS(ON)=21mΩ@VGS=10V
* 60V/80A,RDS(ON)=24mΩ@VGS=4.5V
* Super high density cell design for extremely low
RDS(ON)
* Exceptional on-resistance and .
* Motor Drive
* Power Tools
* LED Lighting
PIN CONFIGURATION(PPAK3x3-8L)
PART MARKING
2020/05/28 Ver 2
Pa.
The SPN8668 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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